N-Kanal MOSFET Transistor D2219UK Dual, 40 V 2 A, SO-8 8-pin
- RS Stock No.:
- 738-7755P
- Mfr. Part No.:
- D2219UK
- Brand:
- Semelab
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (25 units, supplied in a tray)*
CHF.338.10
Temporarily out of stock
- Shipping from 08 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 49 | CHF.13.52 |
| 50 - 99 | CHF.13.25 |
| 100 - 249 | CHF.12.99 |
| 250 + | CHF.12.73 |
*price indicative
- RS Stock No.:
- 738-7755P
- Mfr. Part No.:
- D2219UK
- Brand:
- Semelab
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Channel-Typ | N | |
| Dauer-Drainstrom max. | 2 A | |
| Drain-Source-Spannung max. | 40 V | |
| Gate-Schwellenspannung max. | 5V | |
| Gate-Source Spannung max. | -20 V, +20 V | |
| Gehäusegröße | SOIC | |
| Montage-Typ | SMD | |
| Pinanzahl | 8 | |
| Transistor-Konfiguration | Einfach | |
| Channel-Modus | Enhancement | |
| Kategorie | HF MOSFET | |
| Verlustleistung max. | 17,5 W | |
| Eingangskapazität typ. @ Vds | 12 pF @ 0 V | |
| Breite | 5.08mm | |
| Anzahl der Elemente pro Chip | 1 | |
| Höhe | 2.18mm | |
| Serie | TetraFET | |
| Betriebstemperatur max. | +200°C | |
| Länge | 4.06mm | |
| Abmessungen | 4.06 x 5.08 x 2.18mm | |
| Transistor-Werkstoff | Si | |
| Select all | ||
|---|---|---|
Channel-Typ N | ||
Dauer-Drainstrom max. 2 A | ||
Drain-Source-Spannung max. 40 V | ||
Gate-Schwellenspannung max. 5V | ||
Gate-Source Spannung max. -20 V, +20 V | ||
Gehäusegröße SOIC | ||
Montage-Typ SMD | ||
Pinanzahl 8 | ||
Transistor-Konfiguration Einfach | ||
Channel-Modus Enhancement | ||
Kategorie HF MOSFET | ||
Verlustleistung max. 17,5 W | ||
Eingangskapazität typ. @ Vds 12 pF @ 0 V | ||
Breite 5.08mm | ||
Anzahl der Elemente pro Chip 1 | ||
Höhe 2.18mm | ||
Serie TetraFET | ||
Betriebstemperatur max. +200°C | ||
Länge 4.06mm | ||
Abmessungen 4.06 x 5.08 x 2.18mm | ||
Transistor-Werkstoff Si | ||
- COO (Country of Origin):
- GB