RFP45N06 N-Kanal MOSFET Transistor, 60 V / 45 A, 131 W, TO-220AB 3-Pin
- RS Stock No.:
- 215-8050
- Mfr. Part No.:
- RFP45N06
- Brand:
- Fairchild Semiconductor
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- RS Stock No.:
- 215-8050
- Mfr. Part No.:
- RFP45N06
- Brand:
- Fairchild Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Channel-Typ | N | |
| Dauer-Drainstrom max. | 45 A | |
| Drain-Source-Spannung max. | 60 V | |
| Gehäusegröße | TO-220AB | |
| Montage-Typ | Durchsteckmontage | |
| Pinanzahl | 3 | |
| Drain-Source-Widerstand max. | 28 mΩ | |
| Channel-Modus | Enhancement | |
| Verlustleistung max. | 131 W | |
| Gate-Source Spannung max. | -20 V, +20 V | |
| Anzahl der Elemente pro Chip | 1 | |
| Betriebstemperatur min. | -55 °C | |
| Breite | 4.57mm | |
| Länge | 10.28mm | |
| Betriebstemperatur max. | +175 °C | |
| Gate-Ladung typ. @ Vgs | 125 nC @ 20 V | |
| Höhe | 9.02mm | |
| Select all | ||
|---|---|---|
Channel-Typ N | ||
Dauer-Drainstrom max. 45 A | ||
Drain-Source-Spannung max. 60 V | ||
Gehäusegröße TO-220AB | ||
Montage-Typ Durchsteckmontage | ||
Pinanzahl 3 | ||
Drain-Source-Widerstand max. 28 mΩ | ||
Channel-Modus Enhancement | ||
Verlustleistung max. 131 W | ||
Gate-Source Spannung max. -20 V, +20 V | ||
Anzahl der Elemente pro Chip 1 | ||
Betriebstemperatur min. -55 °C | ||
Breite 4.57mm | ||
Länge 10.28mm | ||
Betriebstemperatur max. +175 °C | ||
Gate-Ladung typ. @ Vgs 125 nC @ 20 V | ||
Höhe 9.02mm | ||