N-Kanal JFET-Transistor TF412ST5G, 30 V 10 mA, SOT-883 3-pin
- RS Stock No.:
- 867-3287
- Mfr. Part No.:
- TF412ST5G
- Brand:
- ON Semiconductor
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in packs of 50)*
CHF.8.10
In Stock
- 8'000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | CHF.0.162 | CHF.8.18 |
| 100 - 200 | CHF.0.131 | CHF.6.57 |
| 250 - 950 | CHF.0.111 | CHF.5.45 |
| 1000 - 1950 | CHF.0.101 | CHF.5.25 |
| 2000 + | CHF.0.101 | CHF.5.15 |
*price indicative
- RS Stock No.:
- 867-3287
- Mfr. Part No.:
- TF412ST5G
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Steckschlüssel Zubehör | JFET | |
| Produkt Typ | JFET | |
| Kabelkanaltyp | N | |
| Drain-Source-Spannung Vds max. | 30 | |
| Konfiguration | Einfach | |
| Montageart | Oberflächenmontage | |
| Gehäusegröße | SOT-883 | |
| Drainstrom Ids | 1.2 to 3 | |
| Betriebstemperatur min. | -55 | |
| Maximale Verlustleistung Pd | 100 | |
| Pinanzahl | 3 | |
| Gate-Source-spannung max Vgs | 20 | |
| Maximale Betriebstemperatur | 150 | |
| Länge | 1.08 | |
| Breite | 0.68 | |
| Normen/Zulassungen | No | |
| Höhe | 0.41 | |
| Automobilstandard | Nein | |
| Select all | ||
|---|---|---|
Steckschlüssel Zubehör JFET | ||
Produkt Typ JFET | ||
Kabelkanaltyp N | ||
Drain-Source-Spannung Vds max. 30 | ||
Konfiguration Einfach | ||
Montageart Oberflächenmontage | ||
Gehäusegröße SOT-883 | ||
Drainstrom Ids 1.2 to 3 | ||
Betriebstemperatur min. -55 | ||
Maximale Verlustleistung Pd 100 | ||
Pinanzahl 3 | ||
Gate-Source-spannung max Vgs 20 | ||
Maximale Betriebstemperatur 150 | ||
Länge 1.08 | ||
Breite 0.68 | ||
Normen/Zulassungen No | ||
Höhe 0.41 | ||
Automobilstandard Nein | ||
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.